500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor

    Key Features

    • Frequency Range: DC - 1.7 GHz
    • Output Power (P3dB): 680 W at 1.3 GHz
    • Linear Gain: 23.9 dB typical at 1.3 GHz
    • Typical PAE3dB: 77.4% at 1.3 GHz
    • Operating Voltage: 50 V
    • Low Thermal Resistance Package
    • CW and Pulse Capable

    The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.

    ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • IFF
      • Avionics
      • Military and Civilian Radar
      • Test Instrumentation

    Product Categories

    Application Categories

    Frequency Min(MHz) DC
    Frequency Max(MHz) 1,700
    Gain(dB) 23.9
    Psat(dBm) 58.3
    PAE(%) 77.4
    Vd(V) 50
    Idq(mA) 1,000
    Package Type NI-780
    RoHS Yes
    Lead Free No
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure