Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.
The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD1823 can deliver PSAT of 227 W at 48 V operation.
Lead-free and ROHS compliant.
This product appears in the following application block diagrams: