QPD2793
2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor
Qorvo's QPD2793 is a discrete GaN on SiC HEMT which operates from 2.62-2.69 GHz. The device is a single stage matched power amplifier transistor.
The QPD2793 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2793 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant.
Last Time Buy: December 4, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2.62-2.69 GHz, Band 7
- Drain voltage: 48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 75%
- NI-400 ceramic package
Typical Applications
- Active Antennas
- Band 7
- Macro Cell Base Station
- Wireless Communications
Parameters
Technical Documents
Design Resources
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