SPA2318Z
1700 - 2200 MHz, 1 Watt Power Amplifier With Active Bias
Key Features
- High Linearity Performance:
- +21dBm IS-95 Channel Power at -55dBc ACP
- +20.7dBm WCDMA Channel Power at -50dBc ACP
- +47dBm Typical OIP3
- On-Chip Active Bias Control
- High Gain: 24dB Typical at 1960MHz
- Surface-Mountable Plastic Package
Qorvo's SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Product Categories
| Frequency Min(MHz) | 1,700 |
| Frequency Max(MHz) | 2,200 |
| Gain(dB) | 24 |
| OP1dB(dBm) | 29.5 |
| OIP3(dBm) | 46.5 |
| NF(dB) | 5.5 |
| Voltage(V) | 5 |
| Current(mA) | 400 |
| Package Type | SOIC-8 |
| ECCN | 5A991.G |
This product appears in the following application block diagrams: