T1G2028536-FS

    DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor

    Key Features

    • Frequency: DC to 2 GHz
    • Output power (P3dB): 260 W at 1.2 GHz
    • Linear gain: 18 dB at 1.2 GHz
    • Operating voltage: 36 V
    • Low thermal resistance package

    Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.

    The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

    Typical Applications

      • Avionics
      • Civilian Radar
      • GPS
      • Military Radar
      • Professional and Military Radio
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
    Frequency Min(MHz) DC
    Frequency Max(MHz) 2,000
    Gain(dB) 19
    Psat(dBm) 54.2
    Drain Efficiency(%) 54
    Vd(V) 36 to 50
    Idq(mA) 576
    Package Type NI-780
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

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