T2G4003532-FS
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
Key Features
- Frequency: DC to 3.5 GHz
- Output power (P3dB): 28 W at 3.5 GHz
- Linear gain: >16 dB at 3.5 GHz
- Operating voltage: 32 V
- Low thermal resistance package
Qorvo's T2G4003532-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Typical Applications
- Civilian Radar
- Military Radar
- Jammers
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 3,500 |
| Gain(dB) | 16.5 |
| Psat(dBm) | 44.5 |
| Drain Efficiency(%) | 49 |
| VD(V) | 32 |
| Idq(mA) | 150 |
| Package Type | NI-360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: