DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC - 12 GHz
    • 44.5dBm nominal Psat at 3GHz
    • 71.6% maximum PAE at 3 GHz
    • 19.6dB nominal power gain at 3 GHz
    • Bias: Vd = 32V, Idq = 100mA
    • Chip dimensions: 0.82 x 1.68 x 0.10 mm

    Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz.

    The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications.

    Lead-free and RoHS compliant.

    Typical Applications

      • Broadband Amplifiers
      • High Efficiency Power Amplifiers
      • Marine Radar
      • Military Communications
      • Point-to-point Communications
      • Satellite Communications (Satcom)
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 19.6
    Psat(dBm) 44.5
    PAE(%) 71.6
    Vd(V) 32
    Idq(mA) 100
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.2

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

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