Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.0 % which makes the TGF2955 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
This product appears in the following application block diagrams: