TGF3015-SM

    0.03 - 3.0 GHz, 10 Watt, 32 V GaN RF Input-Matched Transistor

    Key Features

    • Frequency range: 30 MHz - 3.0 GHz
    • Output power (P3dB): 11W at 2.4 GHz
    • Linear gain: 17.1 dB typical at 2.4 GHz
    • Typical PAE3dB: 62.7% at 2.4 GHz
    • Operating voltage: 32V
    • Low thermal resistance package
    • CW and pulse capable
    • 3 x 3 mm package

    Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

    The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already space-constrained handheld radios.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Civilian Radar
      • Jammers
      • Land Mobile Radio Communications
      • Military Radar
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
    Frequency Min(MHz) 30
    Frequency Max(MHz) 3,000
    Gain(dB) 17
    Psat(dBm) 40.4
    PAE(%) 63
    Vd(V) 32
    Idq(mA) 50
    Package Type QFN
    Package(mm) 3 x 3
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

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