TGF2936

    DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor

    Last Time Buy >

    End of Life announced March 24, 2021 (PCN 21-0070).
    Last Time Buy: October 4, 2021
    Recommended replacement for new designs: TGF2934, TGF2023-2-02
    Contact your local sales representative for assistance.

    Note:  Any orders for Last Time Buy materials from Qorvo are considered non-cancellable, non-returnable.

    Key Features

    • Frequency Range: DC - 25 GHz
    • Output Power (P3dB): 10 W at 10 GHz
    • Linear Gain: 16 dB typical at 10 GHz
    • Typical PAE3dB: 58% at 10 GHz
    • Typical NF at 10 GHz: 1.3 dB
    • Operating voltage: 28V
    • CW and Pulse capable
    • 0.98 x 0.55 x 0.10 die

    The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

    Lead-free and ROHS compliant.

    Typical Applications

      • Defense and Aerospace
      • Broadband Wireless
    Frequency Min(MHz) DC
    Frequency Max(MHz) 25,000
    Gain(dB) 16
    Psat(dBm) 40
    PAE(%) 58
    Vd(V) 28
    Idq(mA) 80
    Package Type die
    Package(mm) 0.98 x 0.55 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001b.3.b

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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