Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
|VD(V)||12 to 32|
|Idq(mA)||50 to 250|
This product appears in the following application block diagrams: