DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC to 18 GHz
    • 40.1 dBm nominal Psat at 3 GHz
    • 73.3% maximum PAE
    • 21 dB nominal power gain
    • Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA
    • Chip dimensions: 0.82 x 0.92 x 0.10 mm

    Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.

    The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.

    The part is lead-free and RoHS compliant.

    Typical Applications

      • Broadband Wireless
      • Military
      • Space
    Frequency Min(MHz) DC
    Frequency Max(MHz) 18,000
    Gain(dB) 21
    Psat(dBm) 40.1
    PAE(%) 73.3
    Vd(V) 12 to 32
    Idq(mA) 50 to 250
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure

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