TGF2952
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
End of Life announced March 24, 2021 (PCN 21-0070).
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2933, TGF2023-2-02
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC - 14 GHz
- 38.4dBm nominal Psat at 3 GHz
- 75.7% maximum PAE at 3 GHz
- 20.4dB nominal power gain at 3GHz
- Bias: Vd = 32V, Idq = 25mA
- Technology: 0.25 um power GaN on SiC
- Chip dimensions: 0.82 x 1.01 x 0.10 mm
Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Typical Applications
- Broadband
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 14,000 |
| Gain(dB) | 20.4 |
| Psat(dBm) | 38.4 |
| PAE(%) | 75.7 |
| Vd(V) | 32 |
| Idq(mA) | 25 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.