GREENSBORO, NC – June 1, 2017 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced the industry’s first Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end module (FEM) for the 39GHz 5G frequency band. The FEM’s unique design – a small footprint that integrates two powerful, multi-function GaN MMICs – addresses the complex challenges faced by telecom equipment manufacturers designing 5G base stations.
Eric Higham, Director, Advanced Semiconductor Applications Service at Strategy Analytics, said, “Continuing advances in mobile device technology and applications will require network infrastructure to support ever-increasing data rates and significantly lower latencies. FEMs such as the Qorvo QPF4005 address challenges of next-generation millimeter wave systems.”
James Klein, president, Qorvo Infrastructure and Defense Products, said, “Qorvo’s announcement of the industry’s first dual-channel GaN front-end module for 39GHz is a key enabler for 5G fixed wireless networks. The QPF4005 combines our millimeter wave expertise and field-proven GaN-on-SiC process technology to help telecom providers quickly and cost-effectively deliver more data to homes and mobile hotspots.”
The dual-channel QPF4005 is built on Qorvo’s highly efficient 0.15-micron GaN-on-SiC technology. It integrates two identical, multi-function GaN MMICs into a small footprint, optimized for phased array element spacing at 39GHz. Each of the MMICs contains a low-noise amplifier, a SPDT switch and a power amplifier.
Telecom equipment manufacturers realize significant improvements in efficiency and operational bandwidth with Qorvo’s GaN-on-SiC technology. Qorvo’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. More information about the benefits of Qorvo’s GaN-on-SiC is available here, and in this video.
Engineering samples of the 39GHz QPF4005 FEM are available now.
|QPF4005 39GHz Dual-Channel GaN MMIC FEM|
|Frequency Band: 39GHz (37-40.5 GHz)|
|Dual Channel: 2 GaN MMICs per package|
|MMICs: 3-stage PA, 3-stage LNA, low-loss T/R switch|
|Average Power: 23 dBm (supporting QAM256 OFDM modulation)|
|Package: 4.5x6mm AC-EHSL (designed to meet tough lattice spacing requirements)|
Qorvo wireless infrastructure products will be showcased at the 2017 International Microwave Symposium (#ims2017) in Honolulu, Hawaii, June 4-9, in booth #1510. To learn more about Qorvo’s high-performance solutions, http://www.qorvo.com/gan.
Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.
Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.
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