QPD1823

    1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency range: 1.8-2.4 GHz
    • Drain voltage: 48V
    • Output power (P3dB): 227W
    • Maximum drain efficiency: 77.5%
    • Efficiency-tuned P3dB gain: 21.7dB
    • NI-400 package

    Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.

    The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD1823 can deliver PSAT of 227 W at 48 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Active Antennas
      • Micro Cell Base Station
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 1,800
    Frequency Max(MHz) 2,400
    Gain(dB) 24
    Psat(dBm) 53.6
    PAE(%) 80
    VD(V) 48
    Idq(mA) 360
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station