QPD2730

    2.575 - 2.635 GHz, 220 Watt, 48 V Doherty GaN RF Power Transistor

    Key Features

    • Frequency range: 2.575-2.635GHz, Band 7
    • Drain voltage: 48V
    • Output power (P3dB): 220W
    • Doherty efficiency: 53%
    • NI-780 ceramic package

    Qorvo's QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz.

    QPD2730 can deliver PAVG of 36 W at 48 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Active Antennas
      • Band 7
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 2,575
    Frequency Max(MHz) 2,635
    Gain(dB) 15.9
    Psat(dBm) 53.5
    PAE(%) 53
    VD(V) 48
    Idq(mA) 210
    Package Type NI-780
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station