QPD2793

    2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency range: 2.62-2.69 GHz, Band 7
    • Drain voltage: 48V
    • Output power (P3dB): 200W
    • Maximum drain efficiency: 75%
    • NI-400 ceramic package

    Qorvo's QPD2793 is a discrete GaN on SiC HEMT which operates from 2.62-2.69 GHz. The device is a single stage matched power amplifier transistor.

    The QPD2793 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD2793 can deliver PSAT of 200 W at 48 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Active Antennas
      • Band 7
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 2,620
    Frequency Max(MHz) 2,690
    Gain(dB) 23
    Psat(dBm) 53
    PAE(%) 75
    VD(V) 48
    Idq(mA) 360
    Package Type NI-400
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station