QPD2795

    2.5 - 2.7 GHz, 360 Watt,48 V GaN RF Power Transistor

    Key Features

    • Frequency range: 2.5-2.7GHz, Band 7, 41
    • Drain voltage: 48V
    • Output power (P3dB): 360W
    • Maximum drain efficiency: 72%
    • NI-780 ceramic package

    Qorvo's QPD2795 is a discrete GaN on SiC HEMT which operates from 2.5-2.7GHz. The device is a single stage matched power amplifier transistor.

    The QPD2795 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD2795 can deliver saturated power (P3dB) of 360 W at 48 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Active Antennas
      • Band 7
      • Band 41
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 2,500
    Frequency Max(MHz) 2,700
    Gain(dB) 22
    Psat(dBm) 55.6
    Drain Efficiency(%) 72
    VD(V) 48
    Idq(mA) 700
    Package Type NI-780
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station