Qorvo's QPD2795 is a discrete GaN on SiC HEMT which operates from 2.5-2.7GHz. The device is a single stage matched power amplifier transistor.
The QPD2795 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2795 can deliver saturated power (P3dB) of 360 W at 48 V operation.
Lead-free and ROHS compliant.
This product appears in the following application block diagrams: