QPD2796

    2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency range: 2.5-2.7GHz
    • Drain voltage: 48V
    • Output power (P3dB): 200W
    • Maximum drain efficiency: 72%
    • Efficiency-Tuned P3dB gain: 20dB

    Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.

    The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD2796 can deliver PSAT of 200 W at 48 V operation.

    Lead-free and ROHS compliant

    Typical Applications

      • Active Antennas
      • Micro Cell Base Station
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 2,500
    Frequency Max(MHz) 2,700
    Gain(dB) 23
    Psat(dBm) 53
    PAE(%) 72
    VD(V) 48
    Idq(mA) 360
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station