Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.
The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2796 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant
This product appears in the following application block diagrams: