TGF2023-2-01

    DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC to 18 GHz
    • 38 dBm nominal Psat at 3 GHz
    • 71.6% maximum PAE
    • 18 dB nominal power gain at 3 GHz
    • Bias: Vd = 12 -32 V, Idq = 125 mA
    • Chip dimensions: 0.82 x 0.66 x 0.10 mm

    Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.

    The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

    Typical Applications

      • Broadband Wireless
      • Military
      • Space
    Frequency Min(MHz) DC
    Frequency Max(MHz) 18,000
    Gain(dB) 18
    Psat(dBm) 38
    PAE(%) 71.6
    VD(V) 12 to 32
    Idq(mA) 25 to 125
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT