Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
|VD(V)||12 to 32|
|Idq(mA)||200 to 1,000|
This product appears in the following application block diagrams: