TGS2355-SM

    0.5 - 6 GHz High Power GaN Switch

    Key Features

    • Frequency range: 0.5 - 6 GHz
    • Insertion loss: < 1.1 dB
    • Power handling: 100 W (Pulsed)
    • Return loss: > 15 dB
    • Isolation: 40 dB typical
    • Control voltages: 0 V/-40 V from either side of the MMIC
    • Switching speed: < 50 ns
    • Reflective switch
    • Dimensions: 5.0 x 5.0 x 1.42 mm

    Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process.

    Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/−40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms.

    The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration.

    Lead-free and RoHS compliant.

    Evaluation boards available on request.

    Typical Applications

      • Commercial Radar
      • Electronic Warfare
      • High Power Switching
      • Military Radar
    Switch Type SPDT
    Frequency Min(MHz) 500
    Frequency Max(MHz) 6,000
    Insertion Loss(dB) < 1.1
    Isolation(dB) 40
    Switching Speed(ns) < 50
    Package Type QFN
    Package(mm) 5.0 x 5.0 x 1.42
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Military Radio

      Military Radio

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar