QPD1008L

    DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

    Key Features

    • Frequency range: DC - 3.2GHz
    • Output power (P3dB): 162 W at 2 GHz
    • Linear gain: > 17 dB typical at 2 GHz
    • Typical PAE3dB: > 70 % at 2 GHz
    • Operating voltage: 50V
    • Low thermal resistance package

    Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Avionics
      • Civilian Radar
      • Jammers
      • Military Radar
      • Narrowband Communications
      • Professional and Military Radio
      • Test Instrumentation
      • Wideband Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 3,200
    Gain(dB) > 17
    Psat(dBm) 52
    PAE(%) 70
    VD(V) 50
    Idq(mA) 260
    Package Type NI-360
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT