TGF2953

    DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC - 12 GHz
    • 41.2dBm nominal Psat at 3.5 GHz
    • 73.7% maximum PAE at 3.5 GHz
    • 18.2dB nominal power gain at 3.5 GHz
    • Bias: Vd = 32V, Idq = 50mA
    • Technology: 0.25 um power GaN on SiC
    • Chip dimensions: 0.82 x 1.14 x 0.10 mm

    Qorvo's TGF2953 is a discrete 2.52 mm GaN on SiC HEMT which operates from DC-12 GHz.

    The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of 18.2 dB at 3.5 GHz. The maximum power added efficiency is 73.7 % which makes the TGF2953 appropriate for high efficiency applications.

    Lead-free and RoHS compliant.

    Typical Applications

      • High Efficiency Power Amplifiers
      • Marine Radar
      • Military Communications
      • Point-to-point Communications
      • Satellite Communications (Satcom)
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 18.2
    Psat(dBm) 41.2
    PAE(%) 73.7
    VD(V) 32
    Idq(mA) 50
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT