November 9, 2022

    Silicon carbide (SiC) FETs have great potential to improve power density, efficiency and cost-effectiveness. However, power loop stray inductance requires special attention to fully exploit the fast-switching capability of SiC FETs. This webinar demonstrates why a simple RC snubber is a superior solution in this challenge. Design tips and guidance on selection of RC snubber value and snubber loss analysis will be included as well.

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