Qorvo Online Design Summit: Silicon Carbide (SiC) FET Design Tips for Fast Switching
November 9, 2022
Silicon carbide (SiC) FETs have great potential to improve power density, efficiency and cost-effectiveness. However, power loop stray inductance requires special attention to fully exploit the fast-switching capability of SiC FETs. This webinar demonstrates why a simple RC snubber is a superior solution in this challenge. Design tips and guidance on selection of RC snubber value and snubber loss analysis will be included as well.