Qorvo offers a wide variety of discrete transistor components using our state-of-the-art, ultra-low-noise 0.15 µm pHEMT and 0.25 µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NF (min) as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die
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DC
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20,000
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14
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22
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22
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1
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55
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8
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29
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Die
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0.41 x 0.34 x 0.10
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DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
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DC
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20,000
|
|
14
|
24
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24
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0.9
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58
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|
8
|
40
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Die
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0.41 x 0.34 x 0.10
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DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
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DC
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20,000
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13
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26
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26
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1.1
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55
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8
|
65
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Die
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DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
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DC
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20,000
|
|
12
|
28
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28
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1.4
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55
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|
8
|
97
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Die
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0.41 x 0.34 x 0.10
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DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
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DC
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20,000
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11.5
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29.5
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29.5
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1
|
56
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|
8
|
130
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Die
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0.41 x 0.54 x 0.10
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DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
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DC
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20,000
|
|
11
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31
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31
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1
|
57
|
|
8
|
194
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Die
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0.41 x 0.54 x 0.10
|
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DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
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DC
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20,000
|
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10.4
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32.5
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32.5
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1
|
63
|
|
8
|
258
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Die
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0.41 x 0.54 x 0.10
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1700 - 2000 MHz High IP3 Dual pHEMT Low Noise Amplifier
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1,700
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2,000
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17.9
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21.6
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0.36
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|
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4.5
|
50
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8 Matching Products
(8 total)
Add/Remove Parameters |
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50 - 1500 MHz High IP3 Dual Low Noise Amplifier
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0.05
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1.5
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18.4
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0.62
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21.4
|
40
|
5
|
55
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QFN
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4 x 4 x 0.85
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1500 - 2300 MHz High IP3 Dual Low Noise Amplifier
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1.5
|
2.3
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18
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0.62
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20.8
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39.8
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5
|
57
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QFN
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4 x 4 x 0.85
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2300 - 6000 MHz High IP3 Dual Low Noise Amplifier
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2.3
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6
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18.4
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0.8
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22.5
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38.2
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5
|
57
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QFN
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4 x 4 x 0.85
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3 Matching Products
(3 total)
Add/Remove Parameters |
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