GaAs pHEMTs

Qorvo offers a wide variety of discrete transistor components using our state-of-the-art, ultra-low-noise 0.13 µm pHEMT and 0.25 µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NF (min) as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.