May 19, 2022
One common challenge when upgrading from Si to SiC is the noise and EMI induced by the fast switching speed, which is what enables high efficiency and high switching frequency. In this third video of the Designer's Guide to Using SiC FETs series, application engineer Mike Zhu shares how to overcome this challenge and use SiC FETs to their full potential.
Explore the Gen 4 750V SiC FETs: https://bit.ly/3nkt7zC Use the FET-Jet Calculator to find your ideal device: https://bit.ly/3r6FeBo