July 28, 2020

    Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs.


    • Introducing new UF3SC SiC FETs – RDS(on) less than 10mΩ
    • The cascode technology “secret sauce”
    • New design possibilities
    • EV inverter
    • Fast battery charging
    • Solar inverter
    • Circuit protection
    • Design support/content