L-Band and S-Band PAs significantly improve performance while reducing system costs

    GREENSBORO, NC – September 30, 2016 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced two new power amplifiers (PAs) including the industry's first 500-watt, L-Band PA internally matched to 50 ohms. These high-power devices are optimized for use in defense and civilian radar systems, with features designed to shorten and simplify system implementation.

    Built on Qorvo's high-performance gallium nitride (GaN) technology, the new QPD1003 meets the performance needs of high-power phased arrays such as Active Electronic Scanned Array (AESA) radars, which operate in the 1.2 to 1.4 GHz frequency range. These systems require PAs that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions. The new QPD1003 addresses these requirements through the innovative use of highly efficient GaN on silicon carbide (SiC) technology.

    Roger Hall, general manager of High Performance Solutions at Qorvo said, "This is the first and only compact, internally matched and high-powered L-Band PA for AESA radar. It's a breakthrough technology that will provide substantial cost benefits and performance enhancements for customers."

    In addition to the QPD1003 L-Band PA, Qorvo also introduced a 450-watt S-Band PA, designed for 3.1 to 3.5 GHz S-Band radar systems. Both devices offer advantages in size and ease of implementation over conventional GaN transistors. They enable multiple frequency bands to be covered by a single matched design, which reduces circuit footprint and overall complexity when used in multi-kilowatt arrays. Additionally, reducing the amount of power dissipation results in further system operational savings by reducing the need to cool the system.

    The new PAs support pulsed and linear operations, and are supplied in an air cavity package suited for defense and civilian radar applications. The table below outlines specifications for each.

    Product Freq (GHz) Vd(V) Psat (W) PAE (%) LS Gain (dB)
    QPD1003 1.2-1.4 50 500 62 17
    QPD1017 3.1-3.5 50 450 57 13

    Additional information about Qorvo's solutions for mission-critical applications can be found here: www.qorvo.com/defense.

    Qorvo is the leading GaN RF supplier for the defense and cable industries*. Since 1999, Qorvo has been driving GaN research and innovation, offering proven GaN circuit reliability and compact, highly efficient products. Qorvo is a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. The Company remains the only GaN supplier to achieve Manufacturing Readiness Level (MRL) 9. Qorvo drives the innovation of GaN products for next-generation systems – from DC through Ka-band – that offer robust performance, low maintenance and long operational lifetimes.

    *Strategy Analytics 2016

    About Qorvo

    Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.

    Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.

    Investor Relations Contact:
    Doug DeLieto
    VP, Investor Relations
    Media Contact:
    Katie Caballero
    Marketing Communications Manager
    Qorvo Infrastructure and Defense Products

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