GREENSBORO, NC – August 10, 2017 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced a new asymmetric Doherty amplifier that enables customers to achieve ultra-high levels of power efficiency in the design of wireless base station equipment. The next-generation gallium nitride on silicon carbide (GaN-on-SiC) solution features two transistors in a single package to maximize linearity, efficiency and gain, and ultimately reduce operating costs.
According to Eric Higham, Strategy Analytics service director, "GaN devices can handle more power than other high-frequency technologies like GaAs and InP, with better frequency performance characteristics than other power technologies like LDMOS."1
Roger Hall, Qorvo's general manager, High Performance Solutions, said, "Today's telecommunications infrastructure design is all about achieving power efficiencies that reduce costs. Our customers tell us that the new GaN-on-SiC QPD2731 transistor achieves these goals as operators bring more capabilities online."
Customers are increasingly moving to GaN-on-SiC in order to realize significant improvements in performance, linearity and efficiency for wireless base stations compared to LDMOS and GaN-on-Si, which have poor thermal characteristics. The QPD2731 addresses this shift with pre-matched, discrete GaN-on-SiC High Electron Mobility Transistors (HEMTs). The new amplifier, currently available for sampling, provides the highest performance available in its operating range of 2.5 to 2.7 GHz.
The QPD2731 can be linearized by standard, commercially available, third-party DPD systems, as previously announced by Qorvo.
|Operating Frequency Range 2.5 - 2.7 GHz|
|Peak Doherty Output Power 55.0 dBm (316 W)|
|Doherty Drain Efficiency 60.0% (47.5 dBm)|
|Doherty Gain 16.0 dB|
|4-lead, earless, ceramic flange NI780 package|
Qorvo offers a broad portfolio of GaN discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. More information about these products is available at: http://www.qorvo.com/products/discrete-transistors/gan-hemts.
Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.
Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.
1 Semiconductor Engineering, RF GaN Gains Steam, July 25, 2016
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