QPA1022

    8.5 – 11 GHz 4 Watt GaN Power Amplifier

    Key Features

    • Frequency Range: 8.5 – 11 GHz
    • Power : 36.5 dBm
    • PAE: 45 %
    • Large Signal Power Gain (PIN = 12 dBm): 24.5 dB
    • Small Signal Gain : 32 dB
    • Bias: VD = 22 V, IDQ = 180 mA, VG = -2.5 V (typical)
    • Package Dimensions: 4 x 4 x 0.85 mm

    Notes:
    1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
    2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

    Qorvo's QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 – 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% power-added efficiency.

    Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems.

    Typical Applications

      • Radar
      • Electronic War
      • Communications
    Frequency Min(GHz) 8.5
    Frequency Max(GHz) 11
    Pout(dBm) 36.5
    Gain(dB) 24.5
    Voltage(V) 22
    Current(mA) 180
    Package(mm) 4 x 4 x 0.85
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar