CMD219

    4-8 GHz (C Band) GaN Low Noise Amplifier MMIC

    Key Features

    • High gain
    • High linearity
    • High RF power survivability
    • Low noise figure
    • Positive gain slope
    • Small die size

    Qorvo's CMD219 is a broadband GaN MMIC low noise amplifier ideally suited for microwave radios and C band applications where small size and high input power survivability are critical design requirements. The broadband device delivers greater than 23 dB of gain with a corresponding output 1 dB compression point of +18 dBm and a noise figure of 1 dB. The CMD219 LNA MMIC features an RF input power survivability of greater than 5 Watts. The CMD219 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching.

    Typical Applications

      • Electronic Warfare (EW)
      • C Band Radar
      • Space
      • Satellite Communications (Satcom)
      • Phased Arrays
    Frequency Min(GHz) 4
    Frequency Max(GHz) 8
    Gain(dB) 23
    NF(dB) 1
    OP1dB(dBm) 18
    OIP3(dBm) 28
    Voltage(V) 5 to 28
    Current(mA) 75
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Keysight Model Library

    This product is included in our Keysight PathWave System Design (SystemVue) and PathWave RF Synthesis (Genesys) compatible component libraries.

    Keysight Library Download