FH101-G
0.05 - 4 GHz GaAs MESFET
Please use TQP3M9028 for new designs.
Key Features
- 50 to 4000 MHz
- 18 dB gain
- +18 dBm P1dB
- +36 dBm OIP3
- Low noise figure
- Single or dual supply operation
- MTTF > 100 years
- Lead free / green / RoHS compliant
- SOT-89 package
Qorvo's FH101-G is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85°C. The FH101-G is available in the environmentally friendly lead-free / green / RoHS-compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH101-G will work for other applications within the 50 to 4000 MHz frequency range such as fixed wireless.
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
| Frequency Min(MHz) | 50 |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 19 |
| OP1dB(dBm) | 18 |
| NF(dB) | 2 |
| Vd(V) | 5 |
| Idq(mA) | 150 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |