QPA2213

    2 -20 GHz 2 Watt GaN Amplifier

    Key Features

    • Frequency Range: 2 – 20 GHz
    • PSAT (PIN=18 dBm): 34 dBm
    • PAE (PIN=18 dBm): 23 %
    • Power Gain (PIN=18 dBm): 16 dB
    • Small Signal Gain: 25 dB
    • Noise Figure: 4.0 dB
    • Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm
    • Package Dimensions: 4.50 x 4.50 x 1.74 mm

    Notes:
    1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
    2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

    Qorvo’s QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 – 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added
    efficiency.

    The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.

    The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems.

    Lead-free and RoHS compliant.

    Typical Applications

      • Military Radar
      • Civilian Radar
    Frequency Min(GHz) 2
    Frequency Max(GHz) 20
    Pout(dBm) 34
    Gain(dB) 16
    PAE(%) 23
    Voltage(V) 18
    Current(mA) 330
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer