1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's QPA2308D is a MMIC power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Operating from 5.0 - 6.0 GHz, the QPA2308D produces greater than 60 W of saturated output power and greater than 21 dB of large-signal gain while achieving greater than 43% power-added efficiency.
Both RF ports are fully matched to 50 ohms with integrated DC blocking capacitors thereby simplifying system integration. The QPA2308D's performance makes it well suited for both commercial and military applications.
Lead-free and RoHS compliant.
|Package(mm)||4.272 x 5.070 x 0.10|