QPD0006
13.5 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN on SiC RF Transistor
Key Features
- Operating Frequency Range: 2.5 - 5.0 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT) at 3.6 GHz: 13.5 W
- Maximum Drain Efficiency at 3.6 GHz: 75%
- Efficiency-Tuned P3dB Gain at 3.6 GHz: 16 dB
- 4.5 x 4.0 mm DFN Package
The QPD0006 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 13.5 W at +48 V operation.
Lead free and RoHS compliant.
Typical Applications
- WCDMA / LTE
- Macrocell Base Station
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
- General Purpose Applications
Product Categories
| Frequency Min(MHz) | 2,500 |
| Frequency Max(MHz) | 5,000 |
| Gain(dB) | 16 |
| Psat(dBm) | 41.3 |
| Drain Efficiency(%) | 75 |
| Vd(V) | 48 |
| Idq(mA) | 40 |
| Package Type | DFN |
| Package(mm) | 4.5 x 4.0 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |