QPD0009J

    15 Watt / 30 Watt, 48 Volt, 3.4 - 3.6 GHz, Asymmetric Doherty

    Key Features

    • Operating Frequency Range: 3400-3600MHz
    • Operating Drain Voltage: +48 V
    • Output Power (PSAT): 50W
    • Drain Efficiency: 54.5%
    • Linear Gain: 14 dB

    The QPD0009J is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0009J can deliver peak Doherty output power 50.0 W at +48V operation.

    Lead-free and RoHS compliant.

     

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station Driver
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,600
    Gain(dB) 14
    Psat(dBm) 47
    Drain Efficiency(%) 54.5
    Vd(V) 48
    Idq(mA) 32.5
    Measured At 38.8
    Package Type DFN
    Package(mm) 7.0 x 6.5
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No