The QPD0009J is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0009J can deliver peak Doherty output power 50.0 W at +48V operation.
Lead-free and RoHS compliant.
|Package(mm)||7.0 x 6.5|