The QPD0011 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.3 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15 W in a Doherty configuration.
Lead free and RoHS compliant.
|Package(mm)||7.0 x 6.5|