The QPD0011J is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.4 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011J can deliver an average power of 16 W in a Doherty configuration.
Lead free and RoHS compliant.
| Frequency Min(MHz) | 3,400 |
| Frequency Max(MHz) | 3,600 |
| Gain(dB) | 12.6 |
| Psat(dBm) | 50.2 |
| Drain Efficiency(%) | 58 |
| Vd(V) | 48 |
| Idq(mA) | 65 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |