The QPD0011J is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.4 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011J can deliver an average power of 16 W in a Doherty configuration.
Lead free and RoHS compliant.
|Package(mm)||7.0 x 6.5|
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