QPD0020

    35 Watt, 48 Volt, DC - 6 GHz GaN RF Power Transistor

    Key Features

    • Operating Frequency Range: 4400 - 5000 MHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (PSAT): 34.7 W
    • Maximum Drain Efficiency: 77.8%
    • Efficiency-Tuned P3 dB Gain: 18.8 dB

    The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

    The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

    The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

    Lead-free and ROHS compliant.

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station Driver
      • Microcell Base Station
      • Small Cell Final Stage
      • Active Antenna
      • Land Mobile and Military Radio Communications
      • General Purpose Applications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 6,000
    Gain(dB) 18.8
    Psat(dBm) 45.4
    Drain Efficiency(%) 77.8
    VD(V) 48
    Idq(mA) 30
    Package Type QFN
    Package(mm) 4.0 x 3.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99