QPD0210
1.8 - 2.7 GHz, 2 x 15 Watt, 48 Volt Dual GaN RF Transistor
Discontinued >
End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 1800 - 2700 MHz
- Operating Drain Voltage: +48 V
- Output Power (PSAT): 16.6 W
- Drain Efficiency: 71.9%
- Linear Gain: 18.8 dB
The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor.
QPD0210 can deliver PSAT of 16.6 W at +48 V operation through each path.
RoHS compliant.
Typical Applications
- W-CDMA / LTE
- Macrocell Base Station Driver
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
Product Categories
| Frequency Min(MHz) | 1,800 |
| Frequency Max(MHz) | 2,700 |
| Gain(dB) | 18.8 |
| Psat(dBm) | 42.2 |
| Drain Efficiency(%) | 71.9 |
| Vd(V) | 48 |
| Idq(mA) | 35 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |