QPD0210

    1.8 - 2.7 GHz, 2 x 15 Watt, 48 Volt Dual GaN RF Transistor

    Production >

    Data sheet available upon request.
    Contact your local sales representative for assistance.

    Key Features

    • Operating Frequency Range: 1800 - 2700 MHz
    • Operating Drain Voltage: +48 V
    • Output Power (PSAT): 16.6 W
    • Drain Efficiency: 71.9%
    • Linear Gain: 18.8 dB

    The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor.

    QPD0210 can deliver PSAT of 16.6 W at +48 V operation through each path.

    RoHS compliant.

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station Driver
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
    Frequency Min(MHz) 1,800
    Frequency Max(MHz) 2,700
    Gain(dB) 18.8
    Psat(dBm) 42.2
    Drain Efficiency(%) 71.9
    Vd(V) 48
    Idq(mA) 35
    Package Type DFN
    Package(mm) 7.0 x 6.5
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99