End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
The QPD0211 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for
Doherty application. QPD0211 can deliver PAVG of 7.6 W at +48 V operation.
Lead-free and RoHS compliant.
| Frequency Min(MHz) | 2,500 |
| Frequency Max(MHz) | 2,700 |
| Gain(dB) | 14.5 |
| Psat(dBm) | 46.8 |
| Drain Efficiency(%) | 55 |
| Vd(V) | 48 |
| Idq(mA) | 35 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 5A991G |