QPD1009
DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor
Key Features
- Frequency range: DC - 4 GHz
- Output power (P3dB): 17 W at 2 GHz
- Linear gain: 24 dB typical at 2 GHz
- Typical PAE3dB: 72% at 2 GHz
- Operating voltage: 50V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
Notes:
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Typical Applications
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Military Radio
- Narrowband Amplifiers
- Test Instrumentation
- Wideband Amplifiers
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 24 |
| Psat(dBm) | 42.3 |
| PAE(%) | 72 |
| VD(V) | 50 |
| Idq(mA) | 26 |
| Package Type | QFN |
| Package(mm) | 3 x 3 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: