QPD1022

    DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor

    Key Features

    • Frequency Range: DC - 12 GHz
    • Output Power (P3dB): 11.0 W at 2 GHz
    • Linear Gain: 24.0 dB typical at 2 GHz
    • Typical PAE3dB: 68.8 % at 2 GHz
    • Operating voltage: 32V
    • Low thermal resistance package
    • CW and Pulse capable
    • 3 x 3 mm package

    The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

    The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.  Evaluation boards are available upon request.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Military Radar
      • Commercial Radar
      • Land Mobile and Military Radio Communications
      • Active Antennas
      • Base Stations
      • Jammers
         
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 24
    PAE(%) 68.8
    VD(V) 32
    Idq(mA) 50
    Package Type QFN
    Package(mm) 3.0 x 3.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Military Radio

      Military Radio

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar