QPD1025

    1800 Watt, 65 Volt, 1.0 - 1.1 GHz, GaN RF Input-Matched Transistor

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    Key Features

    • Frequency Range: 1.0 to 1.1 GHz
    • Output Power (P3dB1): 1862 Watt
    • Linear Gain: 22.5 dB
    • Typical PAE3dB1: 77.2 %
    • Operating voltage: 65 V
    • CW and Pulse capable

    Note1: @ 1.0GHz Load Pull

     
     

    The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

     
     

    Typical Applications

      • IFF Transponders
      • Avionics
       
       

    Product Categories

    Application Categories

    Frequency Min(MHz) 1,000
    Frequency Max(MHz) 1,100
    Gain(dB) 22.5
    Psat(dBm) 62.7
    PAE(%) 77.2
    VD(V) 65
    Idq(mA) 1,500
    Package Type NI-1230 (Earless)
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99