QPD2194
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 1.8-2.2 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT): 371 W
- Maximum Drain Efficiency: 78.8%
- Efficiency-Tuned P3dB Gain: 18.0 dB
- 2-lead, earless, ceramic flange NI400 package
The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2194 can deliver PSAT of 371 W at +48 V operation.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- W-CDMA / LTE
- Macrocell Base Station, B3-B1
- Active Antenna
Product Categories
Application Categories
| Frequency Min(MHz) | 1,800 |
| Frequency Max(MHz) | 2,200 |
| Gain(dB) | 21 |
| Psat(dBm) | 55.7 |
| Drain Efficiency(%) | 78.8 |
| Vd(V) | 48 |
| Idq(mA) | 600 |
| Package Type | NI400 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | No |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.