QPD2194

    300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor

    Key Features

    • Frequency Range: 1.8-2.2 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (PSAT): 371 W
    • Maximum Drain Efficiency: 78.8%
    • Efficiency-Tuned P3dB Gain: 18.0 dB
    • 2-lead, earless, ceramic flange NI400 package

    The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

    The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD2194 can deliver PSAT of 371 W at +48 V operation.

    Lead-free and ROHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station, B3-B1
      • Active Antenna
    Frequency Min(MHz) 1,800
    Frequency Max(MHz) 2,200
    Gain(dB) 21
    Psat(dBm) 55.7
    Drain Efficiency(%) 78.8
    Vd(V) 48
    Idq(mA) 600
    Package Type NI400
    RoHS Yes
    Lead Free Yes
    Halogen Free No
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar