QPD2195
400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor
End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 1.8-2.2 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT): 400 W
- Maximum Drain Efficiency: 75.4%
- Efficiency-Tuned P3dB Gain: 19.1 dB
- 2-lead, earless, ceramic flange NI780 package
The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2195 can deliver P3dB of 400 W at +48 V operation.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Active Antenna
- Macrocell Base Station, B3-B1
- W-CDMA / LTE
Product Categories
Application Categories
| Frequency Min(MHz) | 1,800 |
| Frequency Max(MHz) | 2,200 |
| Gain(dB) | 19.1 |
| Psat(dBm) | 56 |
| Drain Efficiency(%) | 75.4 |
| Vd(V) | 48 |
| Idq(mA) | 720 |
| Package Type | NI-780 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | No |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.