End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
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The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2195 can deliver P3dB of 400 W at +48 V operation.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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