QPD2195

    400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor

    Key Features

    • Frequency Range: 1.8-2.2 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (PSAT): 400 W
    • Maximum Drain Efficiency: 75.4%
    • Efficiency-Tuned P3dB Gain: 19.1 dB
    • 2-lead, earless, ceramic flange NI780 package

    The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

    The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD2195 can deliver P3dB of 400 W at +48 V operation.

    Lead-free and ROHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Active Antenna
      • Macrocell Base Station, B3-B1
      • W-CDMA / LTE
    Frequency Min(MHz) 1,800
    Frequency Max(MHz) 2,200
    Gain(dB) 19.1
    Psat(dBm) 56
    Drain Efficiency(%) 75.4
    VD(V) 48
    Idq(mA) 720
    Package Type NI-780
    RoHS Yes
    Lead Free Yes
    Halogen Free No
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Network Infrastructure > Wireless Infrastructure > Macro Base Station

      Macro Base Station

    • Applications > Network Infrastructure > Wireless Infrastructure > Massive MIMO

      Massive MIMO