The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2195 can deliver P3dB of 400 W at +48 V operation.
Lead-free and ROHS compliant.