QPD2560L
300W, 1-1.5 GHz, GaN on SiC RF Transistor
Key Features
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Operating Frequency Range: 1.0 – 1.5 GHz
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Saturated Output Power PSAT: 55.4dBm
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Drain Efficiency at PSAT: 65%
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Large Signal Gain at PSAT: 15dB
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Bias: VDS=+50V, IDQ=440mA
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Package Type: NI-650
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Package Dimensions: 29.00 x 5.84mm
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Typical Applications
- L-Band Radar
- ISM
- Communications
- Electronic Warfare
Product Categories
Application Categories
| Frequency Min(MHz) | 1,000 |
| Frequency Max(MHz) | 1,500 |
| Gain(dB) | 15 |
| Psat(dBm) | 55.4 |
| Drain Efficiency(%) | 65 |
| Vd(V) | 50 |
| Idq(mA) | 440 |
| Package Type | NI-650 |
| Package(mm) | 29.00 x 5.84 |