Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.
The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2796 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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