QPD3601
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
End of Life announced November 6, 2019 (PCN 19-0202).
Last Time Buy: November 20, 2020
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 3.4-3.6GHz, Band 42
- Drain Voltage: 50V
- Output Power (P3dB): 180W
- Maximum Drain Efficiency: 66%
- NI-400 Ceramic Package
Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor.
The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD3601 can deliver PSAT of 180 W at 50 V operation.
Lead-free and ROHS compliant.
Typical Applications
- Active Antennas
- Band 42
- Macro Cell Base Station
- Wireless Communications
Product Categories
| Frequency Min(MHz) | 3,400 |
| Frequency Max(MHz) | 3,600 |
| Gain(dB) | 22 |
| Psat(dBm) | 52.6 |
| PAE(%) | 66 |
| Vd(V) | 50 |
| Idq(mA) | 420 |
| Package Type | NI-400 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.A.4 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.