QPD3640
3.4 - 3.8 GHz 48 Volt 150 / 300 Watt GaN RF Transistor
The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4 - 3.6 GHz) and Band 43 (3.6 - 3.8 GHz). The device is a single-stage matched, power Doherty amplifier transistor.
QPD3640 can deliver P4dB of 389 W at +50 V operation.
Lead free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Last Time Buy: August 15, 2022
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Key Features
- Operating Frequency Range: 3.4 - 3.8 GHz
- Operating Drain Voltage: +48 V
- Doherty Output Power at P4dB: 389 W 1
- Doherty Drain Efficiency at P4dB: 57.4% 1
- Doherty Linear Gain: 15.6 dB 1
- 4-Lead, Earless, Ceramic NI780 Package
Typical Applications
- WCDMA / LTE
- Macrocell Base Station
- Asymmetric Doherty Applications
Parameters
Technical Documents
Design Resources
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