QPD3640

    3.4 - 3.8 GHz 48 Volt 150 / 300 Watt GaN RF Transistor

    Key Features

    • Operating Frequency Range: 3.4 - 3.8 GHz
    • Operating Drain Voltage: +48 V
    • Doherty Output Power at P4dB: 389 W 1
    • Doherty Drain Efficiency at P4dB: 57.4% 1
    • Doherty Linear Gain: 15.6 dB 1
    • 4-Lead, Earless, Ceramic NI780 Package

    1Based on pulsed P4dB performance at 3.75 GHz.

    The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4 - 3.6 GHz) and Band 43 (3.6 - 3.8 GHz). The device is a single-stage matched, power Doherty amplifier transistor.

    QPD3640 can deliver P4dB of 389 W at +50 V operation.

    Lead free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • WCDMA / LTE
      • Macrocell Base Station
      • Asymmetric Doherty Applications
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,800
    Gain(dB) 15.6
    Psat(dBm) 55.9
    Drain Efficiency(%) 57.4
    Vd(V) 48
    Idq(mA) 342
    Package Type NI-780-4L
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.A.3