QPD3640
3.4 - 3.8 GHz 48 Volt 150 / 300 Watt GaN RF Transistor
Discontinued >
End of Life announced February 4, 2022 (PCN 22-0019).
Last Time Buy: August 15, 2022
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 3.4 - 3.8 GHz
- Operating Drain Voltage: +48 V
- Doherty Output Power at P4dB: 389 W 1
- Doherty Drain Efficiency at P4dB: 57.4% 1
- Doherty Linear Gain: 15.6 dB 1
- 4-Lead, Earless, Ceramic NI780 Package
1Based on pulsed P4dB performance at 3.75 GHz.
The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4 - 3.6 GHz) and Band 43 (3.6 - 3.8 GHz). The device is a single-stage matched, power Doherty amplifier transistor.
QPD3640 can deliver P4dB of 389 W at +50 V operation.
Lead free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- WCDMA / LTE
- Macrocell Base Station
- Asymmetric Doherty Applications
Product Categories
Application Categories
| Frequency Min(MHz) | 3,400 |
| Frequency Max(MHz) | 3,800 |
| Gain(dB) | 15.6 |
| Psat(dBm) | 55.9 |
| Drain Efficiency(%) | 57.4 |
| Vd(V) | 48 |
| Idq(mA) | 342 |
| Package Type | NI-780-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.A.3 |